Abstract
Plasma processes enable the deposition of a wide variety of materials under non-equilibrium conditions. Here we retrace the evolution of the silicon thin-film industry: from hydrogenated amorphous silicon (a-Si:H) in the 1980s to polymorphous silicon and nano- and micro-crystalline, not forgetting its respective alloys with carbon, germanium and oxygen, which gave rise to band gap engineering and the manufacture of tandem and triple junction cells, and enabled spectacular development of electronics on large surfaces, particularly with flat screens. The quest for greater efficiency has led the industry to take an interest in radial junction cells and the deposition of a-Si:H thin films on crystalline silicon to produce so-called heterojunction cells, which hold the efficiency record for crystalline silicon-based technology. We'll also be outlining the future of this sector: the development of crystalline silicon layers epitaxialized at 200°C, opening the way to thin, flexible crystalline cells. What's more, this low-temperature epitaxy has also been demonstrated on GaAs, enabling the creation of c-Si/GaAs tandem cells.